Thermopower measurements at 300 to 650K, together with room-temperature

optical absorption and electrical resistivity studies were performed on indium oxide

(IO) and indium tin oxide (ITO) thin films grown by reactive dc sputtering. The

thermopower of as-grown and oxygen-annealed IO and ITO films measured in Ar

ambient displayed characteristics attributable to oxygen loss. The observations

were substantiated with optical absorption and electrical resistivity results.

Role of Oxygen Vacancies in the High-Temperature Thermopower of Indium Oxide

and Indium Tin Oxide Films. S.R.S.Kumar, S.Kasiviswanathan: Semiconductor

Science and Technology, 2009, 24[2], 025028