The effect of oxygen vacancies upon the transport properties of perovskite

microstructures was studied theoretically. Compared with calculated and measured

I–V curves, it was revealed that electron conduction played an important role in the

oxygen non-stoichiometry perovskite heterostructures even with hole-doped or undoped

material due to the oxygen vacancies. In addition, a detailed understanding

of the influence of oxygen vacancy concentration and temperature on the

conduction characteristics of oxide heterojunction with both forward and reverse

biases was obtained by calculation.

Influence of Oxygen Vacancy on Transport Property in Perovskite Oxide

Heterostructures. P.Han, K.J.Jin, H.B.Lü, J.F.Jia, J.Qiu, C.L.Hu, G.Z.Yang:

Chinese Physics Letters, 2009, 26[2], 027301