TiO2-B nanowires were synthesized by an ion exchanging-thermal treatment. The

unique morphology of pits and dislocations interspersed on TiO2-B nanowires were

firstly characterized and studied by high-resolution transmission electron

microscopy. Oriented attachment was suggested as an important growth

mechanism in the evolvement of pits and dislocations on TiO2-B nanowires.

Lattice shears and fractures were originally formed during the ion exchanging

process of the sodium titanate nanowires, which resulted in the formation of

primary crystalline units and vacancies in the layered hydrogen titanate nanowires.

Then the (110) lattice planes of TiO2-B grown in [110] direction was faster than the

other lattice planes, which caused the exhibition of long dislocations on TiO2-B

nanowires. The enlargement of the vacancies, which was caused by the

rearrangement of primary crystalline units, should be the reason of the formation of

pits. Additionally, the transformation from TiO2-B to anatase could be also

elucidated by oriented attachment mechanism.

The Evolvement of Pits and Dislocations on TiO2-B Nanowires Via Oriented

Attachment Growth. B.Zhao, F.Chen, W.Qu, J.Zhang: Journal of Solid State

Chemistry, 2009, 182[8], 2225-30