Metastable (Zn1−xMgx)O alloy films having a MgO fraction (x = 0.47) in excess of

the solubility limit (x ≈ 0.15) were studied. The residual electron concentrations in

the metastable films were close to those of stable films having a lower MgO

fraction (x = 0.07). In contrast to the electrical conductivity, the diffusivities of

both cations and anions in the metastable films were surprisingly higher than those

in the stable films. This indicated that a high concentration of compensated defects

was generated in metastable alloy with a high MgO fraction. Photo-emission

spectroscopy confirmed the presence of ionized acceptors for charge compensation

in the metastable (Zn1−xMgx)O.

Formation of Compensated Defects in Zinc Magnesium Oxides Assignable from

Diffusion Coefficients and Hard X-Ray Photoemission. T.Ohsawa, I.Sakaguchi, N.Ohashi, H.Haneda, H.Ryoken, K.Matsumoto, S.Hishita, Y.Adachi, S.Ueda,

H.Yoshikawa, K.Kobayashi: Applied Physics Letters, 2009, 94[4], 042104