Deep-level transient spectroscopy was used to characterise four defects with

shallow levels in specimens grown via pulsed laser deposition. These defects all

had deep-level transient spectroscopic peaks below 100K From deep-level transient

spectroscopic measurements and Arrhenius plots, the energy levels of the defects

were calculated to be 31, 64, 100 and 140meV, respectively, below the conduction

band. The 100meV defect exhibited metastable behaviour. Annealing under reverse

bias at above 130K introduced it, while annealing under zero bias above 110K

removed it. The 64 and 140meV defects exhibited a strong electric field assisted

emission; indicating that they may be donors.

Electronic Properties of Shallow Level Defects in ZnO Grown by Pulsed Laser

Deposition. F.D.Auret, W.E.Meyer, P.J.J.Van Rensburg, M.Hayes, J.M.Nel,

H.Von Wenckstern, H.Hochmuth, G.Biehne, M.Lorenz, M.Grundmann: Journal of

Physics - Conference Series, 2008, 100[4], 042038