A single ZnO nanowire with intrinsic oxygen vacancies was utilized to fabricate

four-contact device with focus ion beam lithography technique.

Cathodoluminescent spectra indicate strong near-UV and green emission at both

room temperature and low temperatures. Experimental measurement revealed the

temperature-dependent conductivity of the ZnO nanowire at below 100K. The

further theoretical analysis confirmed that weak localization played an important

role in the electrical transport, which was attributed to the surface states induced by

plenty of oxygen vacancies in ZnO nanowire.

Cathodoluminescent and Electrical Properties of an Individual ZnO Nanowire with

Oxygen Vacancies. X.B.He, T.Z.Yang, J.M.Cai, C.D.Zhang, H.M.Guo, D.X.Shi,

C.M.Shen, H.J.Gao: Chinese Physics B, 2008, 17[9], 3444-7