The ultraviolet emission line at 3.315eV was observed at 8K in ZnO

polycrystalline films and investigated by temperature-dependent

photoluminescence spectra and cathodoluminescence spatial image. The relative

intensity of 3.315eV emission line depends strongly on growth and annealing

conditions. The cathodoluminescence image showed that the 3.315eV emission

localizes on the surface and ridge of ZnO grain. These results suggested that the

3.315eV emission attributes to Zn interstitials at the grain surface and ridge. This

emission was stable in the range from 8K to 300K and contributed to the room

temperature ultraviolet band. Ultraviolet Luminescence Depending on Zn Interstitial in ZnO Polycrystalline

Films. X.Q.Xu, K.Tian, Y.Y.Shi, S.Zhong, W.Y.Zhang, Z.X.Fu: Chinese Physics

Letters, 2008, 25[10], 3783-6