Thin nanobelts with an average width of 7.5nm were synthesized using vapourphase

transport. It was found that stacking faults directed the growth of the thin

nanobelts along the <01•0> direction, with {2¯1•0} top/bottom surfaces and {00•1}

side surfaces. The {00•2} stacking fault, with a translation of 1/3<01•0> extended

throughout the entire length of the ZnO nanobelts. The growth steps at the {01•0}

growth fronts resulted from the {00•2} stacking fault were believed to direct fast

axial growth of the thin ZnO nanobelts.

Stacking Fault Directed Growth of Thin ZnO Nanobelt. Y.X.Chen, X.Q.Zhao,

B.Sha, J.H.Chen: Materials Letters, 2008, 62[15], 2369-71