Yttria-doped zirconia thin films with nanometric sized grains were prepared by

reactive RF sputtering and their oxygen ion conductivities were systematically

measured as a function of yttria doping with levels in the range 0.5 to

9.1mol%Y2O3. Enhanced oxygen ion conductivities, as derived from impedance

spectra, were observed when compared with values reported for bulk YSZ.

Furthermore, the peak conductivity for the films was observed to occur at

considerably reduced yttria levels, i.e., at 6.5mol%Y2O3 (at above 400C) and at

3.2mol%Y2O3 (for temperatures less than about 300C) versus 9mol%Y2O3 in bulk

Yttria-stabilised zirconia. Based upon an analysis of the Raman spectra, these

results were deduced to result from the extended meta-stability of the cubic phase

to reduced yttria levels at nanometric grain sizes.

Enhanced Ionic Conductivity and Phase Meta-Stability of Nano-Sized Thin Film

Yttria-Doped Zirconia (YDZ). W.Jung, J.L.Hertz, H.L.Tuller: Acta Materialia,

2009, 57[5], 1399-404