Dislocations were of scientific and technological interest due to their unusual

physical properties, which were quite different from those in the bulk. It is,

therefore, expected to use dislocations as nanowires which provide functional

properties in a crystal. Here, high densities of dislocations were introduced in oxide

single crystals by high-temperature plastic deformation. Insulating sapphire and

YSZ single crystal were used as model systems. The electron and ion

conductivities were measured for the dislocation introduced crystals respectively. It was found that the dislocations with Ti segregation in sapphire crystal showed

excellent electrical conductivity and dislocations themselves in YSZ crystal

improved the ionic conductivity. This technique has a potential to be applied for

any crystals because of its simplicity, and will be expected to give special and

unprecedented properties to common materials.

Oxide Ceramics with High Density Dislocations and Their Properties. Y.Ikuhara:

Materials Transactions, 2009, 50[7], 1626-32