A solid-state field-assisted diffusion technique was used to induce diffusion of

silver or gold ions into a silica matrix. The obtained systems were characterized by

secondary ion mass spectrometry and Rutherford backscattering spectrometry. The

metal/glass interface chemistry played an important role in the behaviour of the

metals and, especially for Ag, a proper time was required for the deposited film to

first oxidize and then diffuse into the matrix, owing to the external electric field.

Diffusion of Ag in silica was observed to be very sensitive to the applied field at

relatively high temperatures, being stopped when a high field value was applied.

This behaviour may be attributed to the low availability of sites and the build-up of

local electric fields within the glass. As for gold, a quite peculiar behaviour of the

current density during the process was recorded, indicating that its behaviour was

even more complex than one could expect. In general, the presented preliminary

experimental observations demonstrated the potential of the technique.

Silver and Gold Doping of SiO2 Glass by Solid-State Field-Assisted Diffusion.

E.Cattaruzza, F.Gonella, S.Ali, C.Sada, A.Quaranta: Journal of Non-Crystalline

Solids, 2009, 355[18-21], 1136-9