A study was made of the structural defects in the SiOx film prepared by electron

cyclotron resonance plasma chemical vapour deposition and annealing recovery

evolution. The photoluminescence property was observed in the as-deposited and

annealed samples.[-SiO3]2− defects were the luminescence centres of the ultraviolet

photoluminescence from the Fourier transform infrared spectroscopy and

photoluminescence measurements. [-SiO3]2− was observed by positron annihilation

spectroscopy, and this defect can make the S parameters increase. After 1000C

annealing, [-SiO3]2− defects still existed in the films.

Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron

Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment.

X.P.Hao, B.Y.Wang, R.S.Yu, L.Wei, H.Wang, D.G.Zhao, W.C.Hao: Chinese

Physics Letters, 2008, 25[3], 1034-7