Diffusion parameters, such as the integrated diffusion coefficient of the phase, the

tracer diffusion coefficient of species at different temperatures and the activation

energy for diffusion, were determined in V3Si phase with the A15 crystal structure.

The tracer diffusion coefficient of Si was found to be negligible compared to the

tracer diffusion coefficient of V. The calculated diffusion parameters will help to

validate the theoretical analysis of defect structure of the phase, which played an

important role in the superconductivity.

Determination of Diffusion Parameters and Activation Energy of Diffusion in V3Si

Phase with A15 Crystal Structure. A.K.Kumar, T.Laurila, V.Vuorinen, A.Paul:

Scripta Materialia, 2009, 60[6], 377-80