Atomic force microscopy of dislocation etch pit structures was a convenient means

of characterising the dislocation structure in etchable materials at high resolution

for dislocation spacing extending down to 25nm. This was demonstrated for single

crystals of CaF2. The local deformation zone generated around nano-indents at

ambient temperature and the low-angle boundaries generated in the bulk during

uniaxial compression at elevated temperatures were presented as examples.

Quantification of Dislocation Structures at High Resolution by Atomic Force

Microscopy of Dislocation Etch Pits. P.Sadrabadi, K.Durst, M.Göken, W.Blum:

Philosophical Magazine Letters, 2009, 89[6], 391-8