Concentration versus depth profiles of Ag were measured by using neutron activation analysis and serial sectioning. The Ag diffusion appeared to be very fast. In the bulk of dislocation-free wafers, saturation was achieved after short periods of annealing. From this, it was concluded that interstitial Ag was the predominant configuration in Si without dislocations. Equilibrium concentrations of Ag were determined for temperatures of between 1287 and 1598K. The results were thermodynamically analyzed, taking account of Ag-Si liquidus data. In dislocated Si, much higher Ag concentrations were found which varied irregularly with penetration depth. A comparison of the diffusion and solubility of Ag and Au in Si suggested that, in material with dislocations, substitutional Ag could arise from Agi-Ags transitions. Finally, the Agi diffusivity was deduced to be given by:

D(cm2/s) = 6 x 10-1 exp[-1.15(eV)/kT]

Solubility, Diffusion and Thermodynamic Properties of Silver in Silicon. F.Rollert, N.A.Stolwijk, H.Mehrer: Journal of Physics D, 1987, 20[9], 1148-55