The lattice location of implanted Ag was studied using emission channelling. Following the room-temperature implantation of 60keV radioactive 111Ag to doses of 2 x 1012 to 3 x 1012/cm2, the presence of some 30% of Ag on near-substitutional sites (about 0.045nm from ideal substitutional sites) was revealed. Upon annealing at 200 to 300C, the fraction on near-substitutional sites attained a maximum of around 60 to 80%. At higher annealing temperatures it decreased again and, at 600C, the Ag started to diffuse out of the samples. The activation energy for the dissociation of near-substitutional Ag was estimated to be 1.8 to 2.2eV. The experimental results were compared with those for Cu in Si, and common features and differences were noted in the behaviors of the 2 group-IB metals.

Lattice Location of Implanted Ag in Si. U.Wahl, J.G.Correia, A.Vantomme, Isolde: Nuclear Instruments and Methods in Physics Research B, 2002, 190[1-4], 543-6