Using the spreading resistance technique to determine the impurity concentration profiles, an investigation was made of diffusion into (111)-type samples from doped epitaxial source layers deposited in flowing H2. It was found that the acceptor exhibited a significantly lower mobility when freed from surface effects. An analysis of the diffusion data indicated a similar point-defect mechanism for both group-III and group-V dopants. At between 1119 and 1390C, the results could be described by:

D(cm2/s) = 1.385 x 100exp[-3.41(eV)/kT]

Dopant Diffusion in Silicon. III. Acceptors. R.N.Ghoshtagore: Physical Review B, 1971, 3[8], 2507-14