A high-vacuum open-tube method for the diffusion of Al into Si was described. The process permitted Al doping involving surface concentrations ranging from 1017 to 1019/cm3. A simplified mass transport model was developed in order to evaluate the diffusion results. It was found that the Al diffusivity between 1025 and 1175C could be described by:

D(cm2/s) = 1.80 x 100exp[-3.2(eV)/kT]

Aluminum Diffusion into Silicon in an Open Tube High Vacuum System. W.Rosnowski: Journal of the Electrochemical Society, 1978, 125[6], 957-62