It was found that the As diffusivity at between 1095 and 1380C could be described by:

D(cm2/s) = 3.2 x 10-1exp[-3.56(eV)/kT]

Diffusion of Donor and Acceptor Elements in Silicon. C.S.Fuller, J.A.Ditzenberger: Journal of Applied Physics, 1956, 27, 544