It was found that the As diffusivity at between 850 and 1150C could be described by:

D(cm2/s) = 6.0 x 101exp[-4.2(eV)/kT]

Arsenic Isoconcentration Diffusion Studies in Silicon. B.J.Masters, J.M.Fairfield: Journal of Applied Physics, 1969, 40, 2390