Vacuum-annealed crystals were doped uniformly with As to 1019/cm3 at between 1100 and 1200C. After an As evaporation process, the As concentration profile was determined by sectioning and neutron activation analysis. The evaporation rate followed an Arrhenius type temperature dependence with an activation energy for out-diffusion of 2.92eV.

Evaporation Velocity of Arsenic in Silicon. E.Arai, Y.Terunuma: Japanese Journal of Applied Physics, 1970, 9[4], 410