Using the spreading resistance technique, a study was made of diffusion into (111) samples from doped epitaxial source layers deposited in a flowing H2 atmosphere. Under intrinsic conditions, the dopant profiles show excellent Fick-type behavior. It was found that, between 1167 and 1394C, the data could be described by:

D(cm2/s) = 6.55 x 10-2exp[-3.44(eV)/kT]

The results were consistent with a point defect mechanism involving a closely coupled vacancy-impurity ensemble.

Donor Diffusion Dynamics in Silicon. R.N.Ghoshtagore: Physical Review B, 1971, 3[2], 397-403