Using radiotracer techniques, a study was made of the diffusion of As into Si. For temperatures between 950 and 1150C, an intrinsic diffusivity was found which could be described by:

D(cm2/s) = 2.87 x 103exp[-4.58(eV)/kT]

On the basis of a Boltzmann-Matano analysis of the measured impurity atom concentration profiles, it was concluded that the diffusion coefficient was concentration-dependent at high As concentrations.

Concentration Dependent Diffusion of Arsenic in Silicon. D.P.Kennedy, P.C.Murley: Proceedings of the IEEE, 1971, 59[2], 335-6