By using the evacuated closed-tube method, As was diffused from an elemental source, and surface concentrations greater than 2 x 1020/cm3 were obtained at between 973 and 1323K. The surface concentration measured using electrical methods hardly varied at As vapor pressures of between 1.2 and 500torr, whereas the value deduced using the backscattering method increased with increasing vapor pressure. From sheet conductivity results, it was estimated that the diffusivity of As could be described by:

D(cm2/s) = 9.69 x 102exp[-4.45(eV)/kT]

Arsenic Diffusion into Silicon from Elemental Source. S.Ohkawa, Y.Nakajima, Y.Fukukawa: Japanese Journal of Applied Physics, 1975, 14[4], 458-65