Anomalously enhanced diffusion was observed when As-implanted samples were heated from room temperature to more than 1000C within a few seconds. The enhanced diffusivity was described by an activation energy of about 1.8eV and occurred during a very short time. The low activation energy, and the fact that it applied down to very low concentrations, implied that the diffusion could not be concentration enhanced. The substantially lowered activation energy became reasonable when the normal value of 4.leV was reduced by about 2.4eV; the amount required to form Si vacancies or interstitials by a thermal process.

Transient Enhanced Diffusion in Arsenic-Implanted Short Time Annealed Silicon. R.Kalish, T.O.Sedgwick, S.Mader, S.Shatas: Applied Physics Letters, 1984, 44[1], 107-9