Ions of As were implanted into crystalline samples and their diffusion was monitored by applying Rutherford back-scattering and channeling techniques to specimens which had been annealed at between 850 and 1000C, under hydrostatic pressures of up to 30kbar. It was found that the diffusivity at a given temperature increased with increasing pressure. The maximum increase involved a factor of ten. It was deduced that the enhancement of the diffusivity could be described by an activation volume of 5.7cm3/mol. The activation enthalpy for diffusion decreased from a value of 4.5eV at ambient pressure, to 3.6eV at a pressure of 30kbar.

Pressure Dependence of Arsenic Diffusivity in Silicon. E.Nygren, M.J.Aziz, D.Turnbull, J.M.Poate, D.C.Jacobson, R.Hull: Applied Physics Letters, 1985, 47[2l, 105-7