Migration into an underlying Si substrate, from CoSi2 layers which had been implanted with As ions, was studied by using a high-resolution carrier delineation technique. The junction shape was deeper near to the CoSi2 grain boundaries. By using 2-step annealing, or a thin silicide diffusion source, a laterally uniform junction was obtained with As-implanted CoSi2. The diffusion coefficients of As could be measured by using this technique. The activation energy for As diffusion (table 6) was 4.05eV.

Arsenic and Boron Diffusion in Silicon from Implanted Cobalt Silicide Layers. F.La Via, C.Spinella, E.Rimini: Semiconductor Science and Technology, 1995, 10[10], 1362-7

Table 6

Diffusivity of As in Si