The isotope, 76As, was diffused along stair-rod dislocations which were associated with stacking faults in epitaxial layers. The diffusion experiments were carried out in a two-zone furnace, using neutron-activated elemental As as the source. Uniform dislocation densities greater than 106/cm2, with axes which intercepted the diffusion surface were obtained by growing epitaxial layers on Si substrates whose surfaces had been damaged by high-dose ion implantation. Sectioning was carried out using an anodizing and stripping technique, and the activity was measured using liquid scintillation methods. The resultant profiles exhibited a composite shape which suggested the occurrence of normal lattice diffusion close to the surface, with a deeply penetrating portion which was attributed to rapid diffusion along dislocations. At between 950 and 1050C, the intrinsic diffusivity of As in the lattice could be described by:

D(cm2/s) = 5.1 x 10-1exp[-3.53(eV)/kT]

The pipe diffusivity could be described by:

KdD(cm3/s) = 9.4 x 10-8exp[-2.56(eV)/kT]

Diffusion of Arsenic along Dislocations in Epitaxial Silicon Films. D.R.Campbell, K.N.Tu, R.O.Schwenker: Thin Solid Films, 1975, 25[1], 213-20