Using the serial sectioning technique, the tracer diffusion of 198Au into single crystals was studied. Some influence of the dislocation density was detected. This was explained in terms of a model in which vacancy generation occurred at climbing grown-in dislocations. The values of the two effective diffusion coefficients for the dissociative mechanism were determined from the present and previous results. One coefficient took the value of about 3 x 10-7cm2/s between 900 and 1100C, while the other could be described by:

D(cm2/s) = 1.94 x 10-7exp[-0.61(eV)/kT]

between 900 and 1200C. The tracer monovacancy self-diffusion coefficient for Au in Si was estimated to be given by:

D(cm2/s) = 1.98 x 10-7exp[-2.40(eV)/kT]

between 900 and 1200C.

The Diffusion of Gold in ‘Semi-Infinite’ Single Crystals of Silicon. F.A.Huntley, A.F.W.Willoughby: Philosophical Magazine, 1973, 28[6], 1319-40