The diffusion coefficient of Au, which had been implanted into chemical vapor deposited amorphous material, was measured at temperatures ranging from 400 to 800C by using Rutherford back-scattering spectrometry. Within this temperature range, the diffusion coefficient varied between 10-15 and 10-10cm2/s (table 10), with an activation energy of 1.5eV. The diffusion coefficient in this material correlated well with diffusion in ion-implanted amorphous material and with high-temperature diffusion in highly-dislocated crystals.

Gold diffusion in Chemical Vapor Deposited Amorphous Silicon. L.Calcagno, S.U.Campisano, S.Coffa: Journal of Applied Physics, 1989, 66[4], 1874-6