Detailed measurements were made of Au concentration profiles in [110]-type wafers of p-type material. The Au was introduced by means of ion implantation, and was diffused at temperatures of between 1073 and 1473K for times ranging from 60s to 100h. The resistivity profiles were converted into Au concentration profiles by determining the entropy factor for the ionization of the Au donor level. It was suggested that the measured profiles and their time dependence could be explained in terms of the kick-out diffusion mechanism. It was found that the diffusivity was described by the expression:

D(cm2/s) = 2.1 x 10-2exp[-1.7(eV)/kT]

Diffusion of Ion Implanted Gold in p-Type Silicon. S.Coffa, L.Calcagno, S.U.Campisano, G.Calleri, G.Ferla: Journal of Applied Physics, 1988, 64[11], 6291-5