Artificial multi-layers of amorphous Si, and amorphous Si which contained 0.7at%Au, were prepared by ion beam sputtering. The repeat lengths were between 4.4 and 4.8nm. The change in the intensity of the first-order X-ray diffraction peak, that was due to composition modulation, was monitored as a function of annealing time. It was found that the diffusivity data at temperatures ranging from 200 to 260C (table 12) exhibited an Arrhenius behavior, with an activation energy of about 1.3eV.

Diffusivity of Gold in Amorphous Silicon Measured by the Artificial Multilayer Technique. E.Nygren, B.Park, L.M.Goldman, F.Spaepen: Applied Physics Letters, 1990, 56[21], 2094-6