The electronic structure of materials which contained wedge dislocations was analyzed in terms of the gauge theory of dislocations and disclinations. The theory was generalized by including electronic fields in a gauge-invariant form, using the approximations of deformation potential and effective mass. The conditions for the formation of localized electrons were derived for materials containing disclinations. The electrical resistivity which was caused by scattering at wedge disclinations was calculated.

Electronic Properties of Materials with Wedge Disclinations. V.A.Osipov: Izvestiya Ross. Akad. Nauk – Ser. Fiz., 1995, 59[8], 150-64 (Bulletin of the Russian Academy of Sciences - Physics, 1995, 59[8], 1431-4)