Rutherford back-scattering spectrometry and spreading resistance techniques were used to determine concentration profiles for Au which had been implanted and diffused into n-type material. The diffusion annealing was carried out at 1243K for times ranging from 1 to 20h. The resistivity profiles were converted into concentration profiles by solving the charge balance equation. It was found that the diffusivity data for n-type material coincided with those for p-type material (table 17).
Gold Implantation in n-Type Silicon: Entropy Factor and Diffusion Studies. S.Coffa, L.Calcagno, G.Ferla, S.U.Campisano: Journal of Applied Physics, 1990, 68[4], 1601-5
Table 17
Diffusivity of Au in n-Type and p-Type Si
Type | Temperature (C) | D (cm2/s) |
p | 1180 | 2.0 x 10-8 |
n | 1105 | 1.0 x 10-8 |
p | 1105 | 8.8 x 10-9 |
n | 955 | 1.8 x 10-9 |
p | 955 | 1.6 x 10-9 |
p | 890 | 6.8 x 10-10 |
p | 802 | 1.6 x 10-10 |