Using p-n junction and four-point probe resistivity techniques, an investigation was made of the diffusion of B into n-type single crystals from a doped oxide layer produced by reactive sputtering. The surface concentrations were controlled over a wide range of concentrations from 1015 to 1017/cm3 and were almost independent of diffusion temperature and time. The diffusion profiles obtained corresponded closely to the complementary error function. At between 1100 and 1270C, and for a concentration of about 1016/cm3, the diffusion coefficients could be described by:

D(cm2/s) = 1.5 x 10-1exp[-4.25(eV)/kT]

These data corresponded to smaller diffusivities than those obtained by other workers at high concentrations, indicating that at concentrations of the order of 1016/cm3, the diffusion coefficient approached the lower limit regardless of concentration.

Solid-Solid Diffusion of Boron in Silicon Using Reactive Sputtering. K.Nagano, S.Iwauchi, T.Tanaka: Japanese Journal of Applied Physics, 1968, 7[l1], 1361-7