The diffusion of B was studied using 4-point resistivity measurements. At between 700 and 1150C, and B contents of less than 1018/cm3:

D(cm2/s) = 6.0 x 10-7exp[-1.68(eV)/kT]

At impurity levels greater than 1018/cm3, the coefficient depended upon the impurity concentration.

Solid Solubility and Diffusion Coefficients of Boron in Silicon. G.L.Vick, K.M.Whittle: Journal of the Electrochemical Society, 1969, 116[8], 1142-4