The closed-tube method and p-n junction and sheet resistivity methods were used to study the diffusion of B in n-type single crystals. The surface concentrations of B ranged from 1019 to 1020/cm3. At between 1100 and 1250C, the results could be described by:

D(cm2/s) = 5.1 x 100exp[-3.70(eV)/kT]

Boron Diffusion into Silicon Using Elemental Boron. M.Okamura: Japanese Journal of Applied Physics, 1969, 8[12], 1440-8