Impurity redistribution during two-step p-type diffusion was investigated. A theoretical model was formulated, from which a closed-form expression for the impurity profile was obtained. It was deduced that the observations could be described by:

D(cm2/s) = 3.2 x 10-2exp[-3.01(eV)/kT]

On the Redistribution of Boron in the Diffused Layer during Thermal Oxidation. J.S.T.Huang, L.C.Welliver: Journal of the Electrochemical Society, 1970, 117[12], 1577-80