The p-n junction and resistivity methods were used to study the diffusion of B into the (111) and (100) planes of single crystals for various B surface concentrations (table 20). The diffusion coefficients of B into the (100) plane were found to be higher than those into the (111) plane. The higher the B surface concentration, the higher was the diffusivity and the smaller was the activation energy for B diffusion.
M.Katsuta, T.Ouchiyama: Shin Nippon Denki Giho, 1970, 5[1], 9-14
Table 20
Diffusion of B between 1000 and 1200C
Surface Concentration (B/cm3) | Plane | Do(cm2/s) | Q (eV) |
8 x 1019 | (111) | 1.4 x 102 | 4.09 |
2 x 1020 | (111) | 9.5 x 101 | 4.04 |
1 x 1021 | (111) | 8.2 x 100 | 3.65 |
8 x 1019 | (100) | 1.2 x 102 | 4.04 |
2 x 1020 | (100) | 3.0 x 100 | 3.57 |
1 x 1021 | (100) | 1.9 x 100 | 3.48 |