The diffusion of B from sources implanted at 80keV was investigated experimentally and theoretically between 1000 and 1200C for doses of between 1014 and 2 x 1015/cm2. Diffusion was carried out in a steam ambient and the oxide thickness produced ranged from 0.0002 to 0.0012mm. Normal diffusion was observed, except for short-term tests at 1000C. The results were described by:

D(cm2/s) = 3.22 x 10-2exp[-3.02(eV)/kT]

Diffusion of Boron from Implanted Sources under Oxidizing Conditions. J.L.Prince, F.N.Schwettmann: Journal of the Electrochemical Society, 1974, 121[5], 705-10