Diffusion of ion-implanted boron was studied at 1050 to 1250C. Diffusion drive-in was carried out in oxygen and in various oxygen-nitrogen mixtures. The diffusion equation was solved under oxidizing conditions. It was found that B diffusion in (100) material was significantly enhanced if the O content in the annealing ambient was greater than 10%. The dependence of the coefficient could be described by:

D(cm2/s) = 1.5 x 10-1exp[-3.19(eV)/kT]

Diffusion and Segregation of Ion-Implanted Boron in Silicon in Dry Oxygen Ambient. S.P.Murarka: Physical Review B, 1975, 12, 2502