The migration of B in (100), (110) and (111) samples was investigated at between 950 and 1200C using drive-in experiments. When carried out in a dry oxygen ambient, the results obeyed Arrhenius relationships:

D(cm2/s) = 3.25 x 101exp[-3.34(eV)/kT]

D110(cm2/s) = 4.17 x 101exp[-3.33(eV)/kT]

D100(cm2/s) = 6.06 x 100exp[-3.05(eV)/kT]

Temperature dependence of Boron Diffusion in (111), (110) and (100) Silicon. G.Masetti, S.Solmi, G.Soncini: Solid State Electronics, 1976, 19[6], 545-6