(111) wafers were diffused from BN sources at 986 to 1132C, and doping profiles were determined via serial sectioning and sheet conductivity. They revealed near-surface plateaux of nearly constant doping, and large deviations from an erfc profile. The diffusion coefficient was deduced from the profiles using Boltzmann’s method. A marked increase in the coefficient, as a function of B concentration, was noted for concentrations greater than 1019/cm3. The results could be described by:

D(cm2/s) = 1.37 x 100exp[-3.59(eV)/kT]

Comparison of Thai's Theory with Experimental Boron Doping Profiles in Silicon, Diffused from Boron Nitride Sources. K.P.Frohmader, L.Baumbauer: Solid State Electronics, 1980, 23[12], 1263-5