A direct-current reactive phase plasma-sputtering technique was used to obtain a B diffusion-source in the form of a borosilicate glass. The sheet resistance of Si was measured using a four-point probe technique, and the depth of the diffusion lyer as determined by lapping and staining. The B diffusion coefficient in Si as a unction of the B surface concentration was deduced (table 22).

Boron Diffusion from a Reactively Sputtered Glass Source in Si and SiO2. G.D.Bagratishvili, R.B.Jishiashvili, L.V.Piskanovski, Z.N.Sholashvili: Physica Status Solidi A, 1979, 56[1], 27-35

Table 22

Diffusion Parameters for B at 1150C