The profiles of B in glow-discharge hydrogenated amorphous samples were determined by using the 10B(n,α)7Li nuclear reaction. It was found that the diffusivity of B in this material was much greater than it was in crystalline Si (table 23). The activation energy for diffusion was estimated to be 1.5eV and was similar to that for H in the amorphous phase.

Measurement of Boron Diffusivity in Hydrogenated Amorphous Silicon by using Nuclear Reaction 10B(n,α)7Li. H.Matsumura, K.Sakai, M.Maeda, S.Furukawa, K.Horiuchi: Journal of Applied Physics, 1983, 54[6], 3106-10

Table 23

Diffusivity of B in Amorphous (Hydrogenated) and Crystalline Si