The co-diffusion of As and B in monocrystalline samples was studied by means of secondary ion mass spectrometry and rapid thermal annealing. The migration of B alone during annealing at 1050 to 1100C could be described by:

D(cm2/s) = 3 x 100exp[-3.43(eV)/kT]

while the co-diffusion could be described by:

As: D(cm2/s) = 2.283 x 101exp[-4.10(eV)/kT]

B: D(cm2/s) = 9 x 10-1exp[-3.43(eV)/kT]

Diffusion and Codiffusion of Boron and Arsenic in Monocrystalline Silicon during Rapid Thermal Annealings. C.Gontrand, P.Ancey, H.Haddab, G.Chaussemy: Semiconductor Science and Technology, 1992, 7[2], 181-7