Transient enhanced diffusion of ultra-low energy implanted B was investigated. The mechanism which gave rise to enhancement during post-implantation annealing was studied by monitoring B diffusion as a function of temperatures ranging from 600 to 750C, and for implantation energies of 500eV or 1keV. The contributions of several classes of defect cluster to anomalous diffusion were detected. Ultra-fast diffusion, which occurred during ramping-up of the temperature, and a transient diffusion enhancement; with characteristic decay times were detected. The latter decay times were shorter, by some orders of magnitude, than known transient enhanced diffusion lifetimes. The activation energy for the enhanced diffusion was equal to 1.7eV.

Microscopic Aspects of Boron Diffusion in Ultra-Low Energy Implanted Silicon. E.Napolitani, A.Carnera, E.Schroer, V.Privitera, F.Priolo, S.Moffatt: Applied Physics Letters, 1999, 75[13], 1869-71