The transient enhanced diffusion of B, which had been ion-implanted to a dose of 1014/cm2, was studied by means of rapid thermal annealing and secondary ion mass spectrometry. It was found that the fraction of B diffusivity which was due to implantation damage decreased with time according to:

D = Doexp[-t/L]

where Do was the diffusion coefficient at t = 0 and L was the lifetime of the point defect which caused the enhanced diffusion. When the implantation energy was 150keV, the measured parameters were:

Do(cm2/s) = 1.4 x 10-7 exp[-1.1(eV)/kT]

L(s) = 2.9 x 10-6 exp[-1.57(eV)/kT]

The point defect which led to the transient enhanced diffusivity was deduced to be a vacancy. It was shown that final profile broadening due to the enhanced diffusion was smaller at higher temperatures. Both Do and L increased with increasing implantation energy.

Transient Enhanced Diffusion of Ion-Implanted Boron in Si during Rapid Thermal Annealing. M.Miyake, S.Aoyama: Journal of Applied Physics, 1988, 63[5], 1754-7