Anomalously high levels of ion-implanted B diffusivity (table 25) during pulse annealing were attributed to the participation of interstitial Si atoms in the redistribution of migrating B atoms between interstitial and vacancy diffusion mechanisms. At B+ doses of more than 1015/cm2, the high values of B diffusivity were caused by the effect of incompatibility elastic stresses (table 26) that prevented the transition of dopant atoms into lattice sites.

Effect of Radiation Defects and Elastic Incompatibility Stresses on the Electrical Activation and Diffusion of Boron in Ion-Implanted Silicon. V.F.Stelmakh, J.R.Suprun-Belevich, A.R.Chelyadinski: Physica Status Solidi A, 1989, 112[1], 381-4

Table 25

Ambient Diffusion of B as a Function of B, Si Doses and Defect Concentration