The migration of implanted B was investigated at temperatures of between 800 and 1000C (table 28) by using furnace and rapid thermal annealing. The transient enhanced diffusion which was caused by implantation damage in the early phases of annealing was analyzed, and the data could be described by:

D(cm2/s) = 2.2 x 10-2exp[-2.5(eV)/kT]

Diffusion of Boron in Silicon during Post-Implantation Annealing. S.Solmi, F.Baruffaldi, R.Canteri: Journal of Applied Physics, 1991, 69[4], 2135-42

Table 26

Ambient Diffusion of B as a Function of B Dose, Ge Dose, and Incompatibility Stress

 

B (/cm2)

Ge (/cm2)

S (N/m2)

D (cm2/s)

6 x 1014

0

4 x 107

2.5 x 10-13

6 x 1014

5 x 1015

-

8 x 10-14

6 x 1014

1 x 1016

-

5 x 10-14

1.3 x 1015

0

9 x 107

4 x 10-13

1.3 x 1015

5 x 1015

6 x 107

2.5 x 10-13

1.3 x 1015

1 x 1016

5 x 107

1.3 x 10-13

2 x 1015

0

1.5 x 108

5 x 10-13

2 x 1015

5 x 1015

-

4 x 10-13

2 x 1015

1 x 1016

1 x 107

2.5 x 10-13